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| DICE SPECIFICATION RH07 8 76 PAD FUNCTION 1. Offset Adjust 2. -IN 3.+IN 4.V- (Substrate) 5. Do Not Connect 6. OUT 7. V+ 8. Offset Adjust DIE CROSS REFERENCE (Notes 1, 2) LTC Finished Part Number RH07 Order DICE CANDIDATE Part Number Below RH07 DICE 1 2 3 4 78 x 98 mils Backside (substrate) is an alloyed gold layer. Connect to V -. DICE ELECTRICAL TEST LI ITS SYMBOL VOS IOS IB CMRR PSRR AVOL VOUT SR PD PARAMETER Input Offset Voltage Input Offset Current Input Bias Current Common Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Maximum Output Voltage Swing Slew Rate Power Dissipation Note 1: Dice are probe tested at 25C to the limits shown. Final specs after assembly cannot be guaranteed at the die level due to yield loss and assembly shifts. For absolute maximum ratings, typical specifications, performance curves and finished product specifications, please refer to the standard data sheet. Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. W VS = 15V, VCM = 0V, TA = 25C unless otherwise noted. MIN MAX 100 3 4 UNITS V nA nA dB dB V/mV V V V/s 120 6 mW mW CONDITIONS VCM = 13 VS = 3V to 18V RL 2k, VO = 12V RL 2k RL 1k RL 2k No Load No Load, VS = 3V 105 98 200 11.5 10.0 0.1 Note 2: For dice tested to tighter limits than those listed above and/or lot qualification based on sample lot assembly and testing, please contact LTC marketing. 1 DICE SPECIFICATION RH07 Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much "softer" than silicon nitride. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move the die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. During die attach, care must be exercised to ensure no tweezers touch the top of the die. Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. I.D.No. 66-02-0007 2 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900 FAX: (408) 434-0507 www.linear-tech.com rh07 LT/LT 1099 50 * PRINTED IN USA (c) LINEAR TECHNOLOGY CORPORATION 1999 |
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